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MetalsTek Engineering is a trusted manufacturer and supplier of Titanium Sputtering Targets. We offer a highly customized service for sputtering targets, and a backing bonding service is also available.
Purity: 99.2%-99.7%, 99.97%-99.98%, >99.99%, 99.995%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made
Standard Sizes: Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″, 7”, 8” * Thick: 0.125″, 0.250″
Other: Purity, Shape, Size Can be Customized
Purity: 99.9%-99.999%
Thermal Conductivity: 21.9 W/m.K
Melting Point: 1,660°C
Coefficient of Thermal Expansion: 8.6 x 10-6/K
Size Range: OD5.5”~7” * ID5”~5.5” * Length<138”
Purity: 99.9%-99.999%
Thermal Conductivity: 21.9 W/m.K
Melting Point: 1,660°C
Coefficient of Thermal Expansion: 8.6 x 10-6/K
Size: 0.5”*70”*90”
GW: <450 lbs
Purity: >99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made
Standard Sizes: Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″, 7”, 8” * Thick: 0.125″, 0.250″
Other: Purity, Shape, Size Can be Customized
MetalsTek Engineering’s Titanium dioxide sputtering target, comprising Ti and O, is a crucial material. Also known as titanium(IV) oxide or titania (chemical formula TiO2), it occurs naturally in minerals like rutile and anatase. Two high-pressure forms, akaogiite and brookite, are found, notably at the Ries crater in Bavaria. Primarily sourced from ilmenite ore, the most prevalent titanium dioxide-bearing ore globally, rutile is the predominant form containing about 98% titanium dioxide. When heated above 600–800 °C (1,112–1,472 °F), the metastable anatase and brookite phases irreversibly convert to the equilibrium rutile phase.
Indium Bonding and Elastomeric Target Bonding Service are available for Titanium Dioxide Sputtering Target.
| Material Type | Titanium (IV) Oxide |
| Symbol | TiO2 |
| Color/Appearance | White-Beige, Gray Black |
| Theoretical Density | 4.23 g/cc |
| Melting Point | 1,830 °C |
| Sputter | RF, RF-R |
| Type of Bond | Indium, Elastomer |
| Comments | Suboxide, must be reoxidized to rutile. Ta reduces TiO2 to TiO |
Material: Ti/Zr, Ta/Ti, TiB2, TiSe2, TiO, Ti2O3, Ti3O5, W/Ti, TiN, TiF3, TiC, Ti/Al/Si, LiLaTiO3, TiSi2, V/Ti, Ni/Ti, Al/Ti, TiCN, TiFe2O4, Cr/Ti, Nb/Ti, Co/Ti, LaTiO3, SrTiO3, PZT, PbTiO3, Bi4Ti3O12, BaTiO3, and More
Shape: Disc, Plate, Planar, Rotatory, or Customized
Size: Can be Customized
Titanium Sputtering Targets are crucial materials used in the sputter coating process to create thin titanium films. These targets can be found in different purities and sizes to meet specific application requirements. During the sputtering method, high-energy particles bombard the target material, ejecting atoms from the target surface. These atoms then form a thin film on the substrate, producing the desired coating.
The production of Titanium Sputtering Targets involves two primary methods: casting and powder metallurgy. In the casting method, the raw material is melted and poured into a mold to create an ingot. The ingot is then machined to the required target shape. On the other hand, the powder metallurgy method involves melting the raw material, casting it into an ingot, pulverizing the nugget, and then sintering the powder to form the target.
The purity of Titanium Sputtering Targets plays a crucial role in determining the quality of the resulting thin film. These targets are available in high purities, such as 99.99% and 99.995%, to ensure the production of top-notch thin films for various applications.
Titanium Sputtering Targets are extensively used in commercial and research applications, including optoelectronics, nanotechnology, advanced materials, flat panel displays, wear and decorative coatings, semiconductor devices, and optical coatings.
The deposition of titanium thin films using sputtering targets typically requires specific conditions. DC sputtering is a standard method for depositing titanium thin films, with typical deposition conditions including a power of 1-2 kW, a pressure of 0.1-1 mTorr, a substrate bias of -2-10 V, a distance target-sample of 20-30 cm, and a substrate temperature of 50-80 °C. The deposition rate of titanium films is usually in the range of 1-5 nm/min.
| Material Type | Titanium | Z Ratio | 0.628 |
| Symbol | Ti | E-Beam | Excellent |
| Atomic Weight | 47.867 | Thermal Evaporation Techniques | Boat: W |
| Atomic Number | 22 | Crucible: TiC,Ti2-BN | |
| Color/Appearance | Silvery Metallic | E-Beam Crucible Liner Material | Fabmate®, Intermetallic |
| Thermal Conductivity | 21.9 W/m.K | Temp. (°C) for Given Vap. Press. (Torr) | 10-8: 1,067 |
| Melting Point (°C) | 1,660 | 10-6: 1,235 | |
| Coefficient of Thermal Expansion | 8.6 x 10-6/K | 10-4: 1,453 | |
| Theoretical Density (g/cc) | 4.5 | Comments | Alloys with W/Ta/Mo; evolves gas on first heating. |
Titanium Sputtering Targets manufactured by MetalsTek Engineering find versatile applications across various industries, owing to the unique properties of titanium and the precision of our deposition materials. Some critical applications include:
MetalsTek Engineering’s Titanium Sputtering Targets play a crucial role in advancing technological applications across these diverse industries, offering high-quality deposition materials for precision coating processes.
Our Titanium Sputtering Targets are clearly tagged and labeled externally to ensure efficient identification and quality control. Great care is taken to avoid any damage which might be caused during storage or transportation.