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MetalsTek Engineering ensures the production of reliable and precise Hafnium Sputtering Targets to meet the demanding requirements of these diverse applications. The Hafnium Sputtering Targets include Hafnium, Hafnium Oxide, Hafnium Carbide, Hafnium Nitride.
Material: Hafnium, Hf
Purity: 99.99% (Hf+Zr), 99.9% (Ex Zr)
Shape: Disc, Rectangular, Step, Column, or Customized
Size Range: Disc- Dia.<356mm/14”, Thick >1mm/0.039”
Block- Length<813mm/32”, Width<305/12”, Thick >1mm/0.039”
| Material Type | Hafnium | Z Ratio | 0.36 |
| Symbol | Hf | Sputter | DC |
| Atomic Weight | 178.49 | Type of Bond | Indium, Elastomer |
| Atomic Number | 72 | Export Control (ECCN) | 1C231 |
| Appearance | Gray Steel, Metallic | Theoretical Density (g/cc) | 13.31 |
| Thermal Conductivity | 23 W/m.K | Max Power Density (Watts/Square Inch) | 50 |
| Melting Point (°C) | 2,227 | Coefficient of Thermal Expansion | 5.9 x 10-6/K |
Material: Hafnium Carbide, HfC
Purity: 99.5%
Shape: Disc, Rectangular, Step, Column, or Customized
Size Range: Disc- Dia.<356mm/14”, Thick >1mm/0.039”
Block- Length<813mm/32”, Width<305/12”, Thick >1mm/0.039”
| Material Type | Hafnium Carbide |
| Symbol | HfC |
| Melting Point (°C) | ~3,890 |
| Z Ratio | 1.00 (Recommended) |
| Sputter | RF |
| Type of Bond | Indium, Elastomer |
| Export Control (ECCN) | 1C231 |
Material: Hafnium Oxide, HfO2
Purity: 99.95%
Shape: Disc, Rectangular, Step, Column, or Customized
Size Range: Disc- Dia.<356mm/14”, Thick >1mm/0.039”
Block- Length<813mm/32”, Width<305/12”, Thick >1mm/0.039”
| Material Type | Hafnium Oxide | Z Ratio | 1.00 (Recommended) |
| Symbol | HfO2 | Sputter | RF, RF-R |
| Theoretical Density (g/cc) | 9.68 | Type of Bond | Indium, Elastomer |
| Melting Point (°C) | 2,758 | Export Control (ECCN) | 1C231 |
| Color/Appearance | White, Crystalline Solid | Max Power Density (Watts/Square Inch) | 20 |
Material: Hafnium Nitride, HfN
Purity: 99.5%
Shape: Disc, Rectangular, Step, Column, or Customized
Size Range: Disc- Dia.<356mm/14”, Thick >1mm/0.039”
Block- Length<813mm/32”, Width<305/12”, Thick >1mm/0.039”
| Material Type | Hafnium Nitride | Z Ratio | 1.00 (Recommended) |
| Symbol | HfN | Sputter | RF, RF-R |
| Theoretical Density (g/cc) | 13.8 | Type of Bond | Indium, Elastomer |
| Melting Point (°C) | 3,305 | Export Control (ECCN) | 1C231 |
| Color/Appearance | Yellow-Brown, Crystalline Solid | ||
Hafnium carbide sputtering targets are used for thin film deposition, decoration, semiconductor, display, LED, and photovoltaic devices, as well as functional coatings.
Hafnium Sputtering Targets are essential in thin film deposition processes for various industrial and research applications. These targets are used in physical vapor deposition (PVD) and sputtering techniques to create thin films with specific properties. Hafnium is available in high purity with a composition of Hf, an atomic number of 72, and a density of 13.31 g/cc. The melting point of Hafnium is 2233 °C, and the purity of the sputtering targets typically ranges from 99.9% to 99.99% to ensure high-quality deposited films. Hafnium sputtering targets are available in different forms, including standard and customized options to meet specific application requirements. They are used in various applications, including semiconductor deposition, optics, wear protection, decorative coatings, and displays. The Hafnium sputtering targets are known for their approximately 23 W/m.K thermal conductivity.
Due to their unique properties, hafnium and hafnium-related sputtering targets find applications across various advanced technological fields. Some critical applications include:
The diverse applications of Hafnium Sputtering Targets highlight their significance in cutting-edge technologies and industries. These targets play a critical role in developing and manufacturing advanced materials and devices.
Our Hafnium Sputtering Targets and Evaporation Materials are clearly tagged and labeled externally to ensure efficient identification and quality control. Great care is taken to avoid any damage which might be caused during storage or transportation.